| # | Title | Type | Language | |||||||||||
| 1. | - Silvaco Simulation Standard Engineered Excellence A Journal for Process and Device Engineers Generally Applicable Degradation Model for Silicon MOS Devices Introduction The main cause of operational degradation in MOS de vices is believed to be due to the buildup of charge at the Silicon Oxide interface This leads to reduced saturation currents and threshold voltage shifts in MOSFET devices Physics based models of the degradation process typical ly consider the breakin |
PDF Manual | ENGLISH | |||||||||||
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