INSTR cypress hang qxd 1 2 04 09 35 Page 1 BRIINKMAIW EXTRA LONG RUNNING SOLAR POWERED ACCENT LIGHTS HANGING CYPRESS OWNER S MANUAL ASSEMBLY AND OPERATING INSTRUCTIONS INSTR cypress hang qxd 1 2 04 35 A M Page 2 HOW YOUR HANGING CYPRESS SOLAR POWERED L E D LIGHTS WORK A READ and follow all instructions carefully oefore operating your solar light SAVE THIS MANUAL FOR FUTURE REFERENCE
BIG CYPRESS 17 x12 Instructions apply to Part Number 9160 172 When You Are Ready To Set Up Your Tent Select a level campsite clear of rocks branches and other hard or sharp objects Do not set up your tent under trees For best results in windy conditions do not position the door of tent into the wind POLE ASSEMBLY PARTS 2 Main Tent Part No 9160 3421 Poles 1 Rainfly Part No 9160 3481 Pole Rainfly Part No 9160 3461 1 Layout amp Positio
CY7C1318CV18 CY7C1320CV18 CYPRESS PERFORM 18 Mbit DDR II SRAM 2 Word Burst Architecture Features 18 Mbit Density 1M x 18 512Kx 36 267 MHz Clock for high Bandwidth 2 word Burst for reducing Address Bus Frequency Double Data Rate DDR Interfaces data transferred at 534 MHz at 267 MHz Two Input Clocks K and K for precise DDR Timing o SRAM uses rising edges only Two Input Clocks for Output Data C and C to minimize Clock Skew and Fl
IP Phone 1140 User Guide NORTEL Voice Mail I ine 2 235237499 I ND Conference Tianslet Jan 12 12 53pm M q mbo I Shill iDucctOfv cypress COMMUNICATIONS Page 1 About the IP Phone 1140 The IP Phone 1140 brings voice and data to the desktop by connecting directly to a Local Area Network LAN through an Ethernet connection When you are logged on to the network the handset and keypad of the IP Phone operate in the same way as a standa
IP Phone 2004 with KEM User Guide cypress COMMUNICATIONS Document Release C4 2007_052007 Copyright 2007 Cypress Communications All rights reserved CYPress COMMUNICATIONS Contents Overview Functional components 5 Hardware features 6 IP Phone display 8 5 Connecting the IP Phone 2004 components Before you begin 9 9 Logging on 11 Logging off 12 Displaying the menu 13 Changing your audio profile 14 Adjusting the display contrast 15
CYPRESS CY62256 256K 32K x 8 Static RAM Features Functional Description 111 High speed 55 ns and 70 ns Voltage range 4 5V 5 5V operation Low active power 70 ns LL version 275 mW max Low standby power 70 ns LL version 28 liW max _ _ Easy memory expansion with CE and OE features TTL compatible inputs and outputs Automatic power down when deselected CMOS for optimum speed power Package available in a
CY7C185 CYPRESS 8K x 8 Static RAM Features High speed 15 ns Fast tQOE Low active power 715 mW Low standby power 220 mW CMOS for optimum speed power _ Easy memory expansion with CE 1 CE 2 and OE features TTL compatible inputs and outputs Automatic power down when deselected Functional Description 111 The CY7C185 is a high performance CMOS static RAM orga nized as 8192 words by 8 bits Easy memory expansio
CY7C185 CYPRESS 8K x 8 Static RAM Features High speed 15 ns Fast tQOE Low active power 715 mW Low standby power 220 mW CMOS for optimum speed power _ Easy memory expansion with CE 1 CE 2 and OE features TTL compatible inputs and outputs Automatic power down when deselected Functional Description 111 The CY7C185 is a high performance CMOS static RAM orga nized as 8192 words by 8 bits Easy memory expansio
CY7C185 CYPRESS 8K x 8 Static RAM Features High speed 15 ns Fast tQOE Low active power 715 mW Low standby power 220 mW CMOS for optimum speed power _ Easy memory expansion with CE 1 CE 2 and OE features TTL compatible inputs and outputs Automatic power down when deselected Functional Description 111 The CY7C185 is a high performance CMOS static RAM orga nized as 8192 words by 8 bits Easy memory expansio
CY7C185 CYPRESS 8K x 8 Static RAM Features High speed 15 ns Fast tQOE Low active power 715 mW Low standby power 220 mW CMOS for optimum speed power _ Easy memory expansion with CE 1 CE 2 and OE features TTL compatible inputs and outputs Automatic power down when deselected Functional Description 111 The CY7C185 is a high performance CMOS static RAM orga nized as 8192 words by 8 bits Easy memory expansio
PERFORM Comparison between CY14B256L and STK14C88 3 nvSRAM AN20639 Author Shivendra Singh Associated Project No Associated Part Family CY14B256L and STK14C88 3 Associated Application Notes None Application Note Abstract This application note compares the CY14B256L 0 25 pm and the STK14C88 3 0 8 pm devices and presents the results Introduction CY14B256L and STK14C88 3 are both 256K 32K x 8 3V nvSRAMs in two different technologies 0 25 pm and 0 8 pm r
Power Management Low Cost Two Cell Li ion Li Pol Battery Charger with Cell Balancing Support AN2309 Author Oleksandr Karpin Associated Project Yes Associated Part Family CY8C24x23A CY8C24794 CY8C27x43 CY8C29x66 GET FREE SAMPLES HERE Software Version PSoC Designer 5 0 SP1 Associated Application Notes AN2107 AN2258 AN2267 AN2294 PSoC Application Notes Index Application Note Abstract This application note describes a low cost two cell Li ion Li Pol bat
y CYPRESS PERFORM Undershoot Effect in RTC Circuit of 0 25iu nvSRAM AN49947 Associated Part Family CY14BXXXK STK17TX8 GET FREE SAMPLES HERE Application Note Abstract This application note describes the undershoot effect in the RTC circuit of the 256K and 1M nvSRAM in 0 25ju technology The part numbers affected are CY14B256K STK17T88 and CY14B101K STK17TA8 Introduction Under certain noise conditions the Real Time Clock RTC circuit of CY14BXXXK STK17TX8 can be
PERFORM Implementing an 8 Bit Asynchronous Interface with FX2LP AN6077 Author Sonia Gandhi Associated Project No Associated Part Famiiy CY7C68013A GET FREE SAMPLES HERE Software Version None Associated Appiication Notes None Application Note Abstract This application note discusses how to configure the General Programmable Interface GPIF and slave FIFOs of the EZ USB FX2LP to implement an 8 bit asynchronous interface The GPIF is a programmable 8 or 16 bi
STK14CA8 128Kx8 AutoStore nvSRAM Features 25 35 45 ns Read Access and Read Write Cycle Time Unlimited Read Write Endurance Automatic Nonvolatile STORE on Power Loss Nonvolatile STORE Under Hardware or Software Control Automatic RECALL to SRAM on Power Up Unlimited RECALL Cycles 200K STORE Cycles 20 Year Nonvolatile Data Retention Single 3 0V 20 10 Operation Commercial and Industrial Temperatures Small Footp
STK17T88 CYPRESS PERFORM 32K x 8 AutoStore nvSRAM with Real Time Clock Features Description nvSRAM Combined With Integrated Real Time Clock Functions RTC Watchdog Timer Clock Alarm Power Monitor Capacitor or Battery Backup for RTC 25 45 ns Read Access and R W Cycle Time Unlimited Read Write Endurance Automatic Nonvolatile STORE on Power Loss Nonvolatile STORE Under Hardware or Software Control Automatic RECALL to SR
STK17TA8 128k X 8 AutoStore nvSRAM with Real Time Clock Features nvSRAM Combined with Integrated Real Time Clock Functions RTC Watchdog Timer Clock Alarm Power Monitor Capacitor or Battery Backup for RTC 25 45 ns Read Access and Read Write Cycle Time Unlimited Read Write Endurance Automatic nonvolatile STORE on Power Loss Nonvolatile STORE Under Hardware or Software Control Automatic RECALL to SRAM on Power Up Unlimited RECA
CYPRESS PERFORM PSoC Express Development Kit CY3210 ExpressDK The PSoC Express development kit provides a feature rich hardware platform for developing and testing designs created with PSoC Express This kit contains a complete PSoC Express development environment including a large full featured development board fan modules proto modules 28 DIP samples and a MiniProg Programmer Kit Includes Development Board Four Fan Modules Two Proto Modules MiniPro
CYPRESS PERFORM PSoC Express Development Kit CY3210 ExpressDK The PSoC Express development kit provides a feature rich hardware platform for developing and testing designs created with PSoC Express This kit contains a complete PSoC Express development environment including a large full featured development board fan modules proto modules 28 DIP samples and a MiniProg Programmer Kit Includes Development Board Four Fan Modules Two Proto Modules MiniPro
PERFORM CY8C20x36 46 66 CY8C20396 CapSense Applications Features 1 71V to 5 5V Operating Range Low Power CapSense Block Configurable Capacitive Sensing Elements Supports Combination of CapSense Buttons Sliders Touchpads Touch Screens and Proximity Sensor Powerful Harvard Architecture Processor M8C Processor Speeds Running to 24 MHz Low Power at High Speed Interrupt Controller Temperature Range 40 C to 85 C
PERFORM CY8C20x36 46 66 CY8C20396 CapSense Applications Features 1 71V to 5 5V Operating Range Low Power CapSense Block Configurable Capacitive Sensing Elements Supports Combination of CapSense Buttons Sliders Touchpads Touch Screens and Proximity Sensor Powerful Harvard Architecture Processor M8C Processor Speeds Running to 24 MHz Low Power at High Speed Interrupt Controller Temperature Range 40 C to 85 C
CYPRESS PERFORM PSoC Express Development Kit CY3210 ExpressDK The PSoC Express development kit provides a feature rich hardware platform for developing and testing designs created with PSoC Express This kit contains a complete PSoC Express development environment including a large full featured development board fan modules proto modules 28 DIP samples and a MiniProg Programmer Kit Includes Development Board Four Fan Modules Two Proto Modules MiniPro
CDL 160ETH Ethernet and USB to HDMI Converter Operation Manual Disclaimers The information in this manual has been carefully checked and is believed to be accurate Cypress Technology assumes no responsibility for any infringements of patents or other rights of third parties which may result from its use Cypress Technology assumes no responsibility for any inaccuracies that may be contained in this document Cypress also makes no commitment to update or to keep cu
Scart Video to PC HD Scaler Box Operation Manual 1 Introduction Congratulations on your purchase of the Cypress Video Scaler CM 394 Our professional Video Scaler products have been serving the industry for many years In addition to Video Scalers Cypress offers a full line of high quality PC multimedia Standard Converters HDMI DVI Splitters and Switchers Video Mixer Time Base Correctors and Video Processors Please visit www cypress com tw to learn more details abou
User s Manual Model CSC 5300 Nano Isothermal Titration Calorimeter III Isothermal Titration Calorimeter User s Manual Revision 40605 Copyright 2005 Calorimetry Sciences Corporation All Rights Reserved Printed in the United States of America No part of the manual may be photocopied or reproduced in any form without the express written permission of Calorimetry Sciences Corporation This manual is supplied as is without any warranty of any kind and 1
CY14B101K y CYPRESS PERFORM 1 Mbit 128K x 8 nvSRAM With Real Time Clock Features 25 ns 35 ns and 45 ns access times Pin compatible with STK17TA8 Data integrity of Cypress nvSRAM combined with full featured Real Time Clock RTC Low power 350 nA RTC current Capacitor or battery backup for RTC Watchdog timer Clock alarm with programmable interrupts Hands off automatic STORE on power down with only a small capacitor STORE
CY14B101L y CYPRESS PERFORM 1 Mbit 128K x 8 nvSRAM Features 25 ns 35 ns and 45 ns access times Pin compatible with STK14CA8 Hands off automatic STORE on power down with only a small capacitor STORE to QuantumTrap nonvolatile elements is initiated by software hardware or AutoStore on power down RECALL to SRAM initiated by software or power up Unlimited READ WRITE and RECALL cycles 200 000 STORE cycles to QuantumTrap
y CYPRESS PERFORM PRELIMINARY CY14B101LA CY14B101NA 1 Mbit 128K x 8 64K x 16 nvSRAM Features 20 ns 25 ns and 45 ns Access Times Internally organized as 128K x 8 CY14B101LA or 64K x 16 CY14B101NA Hands off Automatic STORE on power down with only a small Capacitor STORE to QuantumTrap nonvolatile elements initiated by Software device pin or AutoStore on powerdown RECALL to SRAM initiated by software or power up Infinite Read W
CYPRESS PERFORM PRELIMINARY CY14B101LA CY14B101NA 1 Mbit 128K X 8 64K x 16 nvSRAM Features 20 ns 25 ns and 45 ns Access Times Internally organized as 128K x 8 CY14B101LA or 64K x 16 CY14B101NA Hands off Automatic STORE on powerdown with only a small Capacitor STORE to QuantumTrap nonvolatile elements initiated by Software device pin or AutoStore on power down RECALL to SRAM initiated by software or power up Infinite Read Wri
CY14B101P PERFORM PRELIMINARY 1 Mbit 128K x 8 Serial SPI nvSRAM with Real Time Clock Features 1 Mbit Nonvolatile SRAM Internally organized as 128K x 8 STORE to QuantumTrap nonvolatile elements initiated automatically on power down AutoStore or by user using HSB pin Hardware Store or SPI instruction Software Store D RECALL to SRAM initiated on power up Power Up Recall or by SPI Instruction Software Recall Automatic STORE on power d
CY14B101Q1 CY14B101Q2 CY14B101Q3 y CYPRESS PERFORM PRELIMINARY 1 Mbit 128K x 8 Serial SPI nvSRAM Features 1 Mbit Nonvolatile SRAM Internally organized as 128K x 8 STORE to QuantumTrap nonvolatile elements initiated au tomatically on power down AutoStore or by user using HSB pin Hardware Store or SPI instruction Software Store RECALL to SRAM initiated on power up Power Up Recall or by SPI Instruction Software RECALL Auto
CY14B101Q1 CY14B101Q2 CY14B101Q3 y CYPRESS PERFORM PRELIMINARY 1 Mbit 128K x 8 Serial SPI nvSRAM Features 1 Mbit Nonvolatile SRAM Internally organized as 128K x 8 STORE to QuantumTrap nonvolatile elements initiated au tomatically on power down AutoStore or by user using HSB pin Hardware Store or SPI instruction Software Store RECALL to SRAM initiated on power up Power Up Recall or by SPI Instruction Software RECALL Auto
CY14B101Q1 CY14B101Q2 CY14B101Q3 y CYPRESS PERFORM PRELIMINARY 1 Mbit 128K x 8 Serial SPI nvSRAM Features 1 Mbit Nonvolatile SRAM Internally organized as 128K x 8 STORE to QuantumTrap nonvolatile elements initiated au tomatically on power down AutoStore or by user using HSB pin Hardware Store or SPI instruction Software Store RECALL to SRAM initiated on power up Power Up Recall or by SPI Instruction Software RECALL Auto
W0 CYPRESS PRELIMINARY CY14B104K CY14B104M 4 Mbit 512K x 8 256K x 16 nvSRAM with Real Time Clock Features 20 ns 25 ns and 45 ns access times Internally organized as 512K x 8 CY14B104K or 256K x 16 CY14B104M Hands off automatic STORE on power down with only a small capacitor STORE to QuantumTrap nonvolatile elements is initiated by software device pin or AutoStore on powerdown RECALL to SRAM initiated by software or power up High r
PERFORM CY14B104L CY14B104N 4 Mbit 512K x 8 256K x 16 nvSRAM Features 20 ns 25 ns and 45 ns Access Times Internally organized as 512K x 8 CY14B104L or 256K x 16 CY14B104N Hands off Automatic STORE on power down with only a small Capacitor STORE to QuantumTrap nonvolatile elements initiated by software device pin or AutoStore on power down RECALL to SRAM initiated by software or power up Infinite Read Write and Recall Cycles
PERFORM PRELIMINARY CY14B104LA CY14B104NA 4 Mbit 512K x 8 256K x 16 nvSRAM Features 20 ns 25 ns and 45 ns access times Internally organized as 512K x 8 CY14B104LA or 256K x 16 CY14B104NA Hands off automatic STORE on power down with only a small capacitor STORE to QuantumTrap nonvolatile elements initiated by software device pin or AutoStore on power down RECALL to SRAM initiated by software or power up Infinite Read Write an
W0 CYPRESS PRELIMINARY CY14B104K CY14B104M 4 Mbit 512K x 8 256K x 16 nvSRAM with Real Time Clock Features 20 ns 25 ns and 45 ns access times Internally organized as 512K x 8 CY14B104K or 256K x 16 CY14B104M Hands off automatic STORE on power down with only a small capacitor STORE to QuantumTrap nonvolatile elements is initiated by software device pin or AutoStore on powerdown RECALL to SRAM initiated by software or power up High r
PERFORM CY14B104L CY14B104N 4 Mbit 512K x 8 256K x 16 nvSRAM Features 20 ns 25 ns and 45 ns Access Times Internally organized as 512K x 8 CY14B104L or 256K x 16 CY14B104N Hands off Automatic STORE on power down with only a small Capacitor STORE to QuantumTrap nonvolatile elements initiated by software device pin or AutoStore on power down RECALL to SRAM initiated by software or power up Infinite Read Write and Recall Cycles
PERFORM PRELIMINARY CY14B104LA CY14B104NA 4 Mbit 512K x 8 256K x 16 nvSRAM Features 20 ns 25 ns and 45 ns access times Internally organized as 512K x 8 CY14B104LA or 256K x 16 CY14B104NA Hands off automatic STORE on power down with only a small capacitor STORE to QuantumTrap nonvolatile elements initiated by software device pin or AutoStore on power down RECALL to SRAM initiated by software or power up Infinite Read Write an
W0 CYPRESS PRELIMINARY CY14B108K CY14B108M 8 Mbit 1024K x 8 512K x 16 nvSRAM with Real Time Clock Features 20 ns 25 ns and 45 ns access times Internally organized as 1024K x 8 CY14B108K or 512K x 16 CY14B108M Hands off automatic STORE on power down with only a small capacitor STORE to QuantumTrap nonvolatile elements is initiated by software device pin or AutoStore on power down RECALL to SRAM initiated by software or power up Hi
CY14B108L CY14B108N PERFORM PRELIMINARY 8 Mbit 1024K x 8 512K x 16 nvSRAM Features 20 ns 25 ns and 45 ns Access Times Internally organized as 1024K x 8 CY14B108L or 512K x 16 CY14B108N Hands off Automatic STORE on powerdown with only a small Capacitor STORE to QuantumTrap nonvolatile elements initiated by Software device pin or AutoStore on power down RECALL to SRAM initiated by Software or power up Infinite Read Write and
W0 CYPRESS PRELIMINARY CY14B108K CY14B108M 8 Mbit 1024K x 8 512K x 16 nvSRAM with Real Time Clock Features 20 ns 25 ns and 45 ns access times Internally organized as 1024K x 8 CY14B108K or 512K x 16 CY14B108M Hands off automatic STORE on power down with only a small capacitor STORE to QuantumTrap nonvolatile elements is initiated by software device pin or AutoStore on power down RECALL to SRAM initiated by software or power up Hi
CY14B108L CY14B108N PERFORM PRELIMINARY 8 Mbit 1024K x 8 512K x 16 nvSRAM Features 20 ns 25 ns and 45 ns Access Times Internally organized as 1024K x 8 CY14B108L or 512K x 16 CY14B108N Hands off Automatic STORE on powerdown with only a small Capacitor STORE to QuantumTrap nonvolatile elements initiated by Software device pin or AutoStore on power down RECALL to SRAM initiated by Software or power up Infinite Read Write and
CY14B256K PERFORM 256 Kbit 32K x 8 nvSRAM with Real Time Clock Features 25 ns 35 ns and 45 ns access times Pin compatibie with STK17T88 Data integrity of Cypress nvSRAM combined with fuii featured Reai Time Ciock Low power 350 nA RTC current Capacitor or battery backup for RTC Watchdog timer Ciock aiarm with programmabie interrupts Hands off automatic STORE on power down with only a smail capacitor STORE to QuantumTrap
PERFORM Comparison between CY14B256L and STK14C88 3 nvSRAM AN20639 Author Shivendra Singh Associated Project No Associated Part Family CY14B256L and STK14C88 3 Associated Application Notes None Application Note Abstract This application note compares the CY14B256L 0 25 pm and the STK14C88 3 0 8 pm devices and presents the results Introduction CY14B256L and STK14C88 3 are both 256K 32K x 8 3V nvSRAMs in two different technologies 0 25 pm and 0 8 pm r
CY14E102L CY14E102N y CYPRESS PERFORM ADVANCE 2 Mbit 256K x 8 128K x 16 nvSRAM Features 15 ns 20 ns 25 ns and 45 ns access times Internally organized as 256K x 8 CY14E102L or 128K x 16 CY14E102N Hands off automatic STORE on power down with only a small capacitor STORE to QuantumTrap nonvolatile elements initiated by software device pin or AutoStore on power down RECALL to SRAM initiated by software or power up Infinite
CY14E102L CY14E102N y CYPRESS PERFORM ADVANCE 2 Mbit 256K x 8 128K x 16 nvSRAM Features 15 ns 20 ns 25 ns and 45 ns access times Internally organized as 256K x 8 CY14E102L or 128K x 16 CY14E102N Hands off automatic STORE on power down with only a small capacitor STORE to QuantumTrap nonvolatile elements initiated by software device pin or AutoStore on power down RECALL to SRAM initiated by software or power up Infinite
CY14E256L PERFORM 256 Kbit 32K x 8 nvSRAM Features 25 ns 35 ns and 45 ns access times Pin compatible with STK14C88 Hands off automatic STORE on power down with external 68 pF capacitor STORE to QuantumTrap nonvolatile elements is initiated by software hardware or AutoStore on power down RECALL to SRAM initiated by software or power up Unlimited READ WRITE and RECALL cycles 1 000 000 STORE cycles to QuantumTrap 100 year
CY2048WAF CYPRESS Flash Programmable Capacitor Tuning Array Die for Crystal Oscillator XO Features Benefits Flash programmable capacitor tuning array for low ppm initial frequency clock output Low clock output jitter 4 ps typ RMS period jitter 30 ps typ peak to peak period jitter Flash programmable dividers Two pin programming interface On chip oscillator runs from 10 48 MHz crystal Five selectable post divide options usi
CY2071A CY2907 Clock Generators y CYPRESS PERFORM AN2701 The Cypress CY2071A and CY2907 family of products are discontinued and should no longer be used for new designs The CY22381 is a 3 3V pin for pin compatible replacement for the CY2071A and should be used in all new designs and legacy device modifications There is no option for a 5V VDD on the CY22381 There is no direct pin for pin replacement for the CY2907 The CY22392 is the closest match in functional ity to the
CY2291 Three PLL General Purpose EPROM Programmable Clock Generator Features Three integrated phase locked loops EPROM programmability Factory programmable CY2291 or field programmable CY2291F device options Low skew low jitter high accuracy outputs Power management options Shutdown OE Suspend Frequency select option Smooth slewing on CPUCLK Configurable 3 3V or 5V operation 20 pin SOIC Package Benefits Gener
_ CY25566 Spread Spectrum Clock Generator Features 25 to 200 MHz operating frequency range Wide range of spread selections 9 Accepts clock or crystal inputs Provides four clocks SSCLKIa SSCLKIb SSCLK2 REFOUT Low power dissipation 3 3V 70 mW typical 40 MHz no load Center spread modulation Low cycle to cycle jitter 16 pin SOIC package Applications High resolution VGA controllers LCD panels an
CYPRESS PERFORM CY25818 19 Spread Spectrum Clock Generator Features 8 to 32 MHz input frequency range CY25818 8 16 MHz CY25819 16 32 MHz Separate modulated and unmodulated clocks Accepts clock crystal and resonator inputs Down spread modulation Power down function Low power dissipation CY25818 33 mW typ 8 MHz CY25818 56 mW typ 16 MHz CY25819 36 mW typ 16 MHz CY25819 63 mW typ 32 MHz
CYPRESS PERFORM CY25818 19 Spread Spectrum Clock Generator Features 8 to 32 MHz input frequency range CY25818 8 16 MHz CY25819 16 32 MHz Separate modulated and unmodulated clocks Accepts clock crystal and resonator inputs Down spread modulation Power down function Low power dissipation CY25818 33 mW typ 8 MHz CY25818 56 mW typ 16 MHz CY25819 36 mW typ 16 MHz CY25819 63 mW typ 32 MHz
y CYPRESS CY25822 2 CK SSC Spread Spectrum Clock Generator Features 3 3V operation 48 and 66 MHz frequency support Selectable slew rate control 350 pS jitter l 2 C programmability 500 A power down current Spread Spectrum for best electromagnetic interference EMI reduction 8 pin SOIC package Block Diagram VDD Pin Configuration clkin T VDD 2_ clkout T T pwrdwn T SCLOCK C Y 25822 2 _ G N D Yl 6
CY2071A CY2907 Clock Generators y CYPRESS PERFORM AN2701 The Cypress CY2071A and CY2907 family of products are discontinued and should no longer be used for new designs The CY22381 is a 3 3V pin for pin compatible replacement for the CY2071A and should be used in all new designs and legacy device modifications There is no option for a 5V VDD on the CY22381 There is no direct pin for pin replacement for the CY2907 The CY22392 is the closest match in functional ity to the
y CYPRESS CY62128B MoBL 1 Mbit 128K x 8 Static RAM Features Temperature Ranges Commercial 0 C to 70 C Industrial 40 C to 85 C Automotive 40 C to 125 4 5V 5 5V operation CMOS for optimum speed power Low active power 70 ns LL version Commercial Industrial 82 5 mW max 15 mA Low standby power 70 ns LL version Commercial Industrial IIOpW max 15 pA Automatic power down when des
CY62128EV30 PERFORM MoBL 1 Mbit 128K x 8 Static RAM Features Very high speed 45 ns Temperature ranges Industrial 40 C to 85 C Automotive A 40 C to 85 C Automotive E 40 C to 125 C Wide voltage range 2 20V 3 60V Pin compatible with CY62128DV30 Ultra low standby power Typical standby current 1 pA Maximum standby current 4 pA Ultra low active power Typical active current 1 3 mA f 1 M
CYPRESS _ CY62136VN MoBL PERFORM 2 Mbit 128K x 16 Static RAM Features Temperature Ranges Industrial 40 C to 85 C Automotive A 40 C to 85 C Automotive E 40 C to 125 C High speed 55 ns Wide voltage range 2 7V 3 6V Ultra low active standby power Easy memory expansion with CE and OE features TTL compatible inputs and outputs Automatic power down when deselected CMOS for optimum speed power
CYPRESS PERFORM Features CY62137EV30 MoBL 2 Mbit 128K x 16 Static RAM Functional Description Very high speed 45 ns Wide voltage range 2 20V 3 60V Pin compatible with CY62137CV30 Ultra low standby power Typical standby current 1 UA Maximum standby current 7jliA Ultra low active power Typical active current 2 mA f 1 MHz Easy memory expansion with CE and OE features Automatic power down when deselected
PERFORM CY62137FV30 MoBL 2 Mbit 128K x 16 Static RAM Features Very high speed 45 ns Temperature ranges Industrial 40 C to 85 C Automotive A 40 C to 85 TH Automotive E 40 C to 125 C Wide voltage range 2 20V 3 60V Pin compatible with CY62137CV CV25 CV30 CV33 CY62137V and CY62137EV30 Ultra low standby power Typical standby current 1 gA Maximum standby current 5 pA Industrial Ultra low active
CYPRESS PERFORM CY62138EV30 MoBL 2 Mbit 256K x 8 MoBL Static RAM Features Very high speed 45 ns Wide voltage range 2 20V 3 60V Pin compatible with CY62138CV30 Ultra low standby power Typical standby current 1 pA Maximum standby current 7 pA Ultra low active power Typical active current 2 mA f 1 MHz Easy memory expansion with CE and OE features Automatic power down when deselected CMOS for optim
y CYPRESS PERFORM CY62138FV30 MoBL 2 Mbit 256K x 8 Static RAM Features Very high speed 45 ns Wide voltage range 2 20V 3 60V Pin compatible with CY62138CV25 30 33 Ultra low standby power Typical standby current 1 pA Maximum standby current 5 pA Ultra low active power Typical active current 1 6 mA f 1 MHz Easy memory expansion with CE CE 2 and OE features Automatic power down when deselected CMOS for
CY62146DV30 CYPRESS 4 Mbit 256K x 16 Static RAM Features Very high speed 45 ns Wide voltage range 2 20V 3 60V Pin compatible with CY62146CV30 Ultra low active power Typical active current 1 5 mA f 1 MHz Typical active current 8 mA f f max Ultra low standby power Easy memory expansion with CE and OE features Automatic power down when deselected CMOS for optimum speed power Packages offered 48 ball BGA a
CYPRESS PERFORM Features Very high speed 45 ns Wide voltage range 2 20V 3 60V Pin compatible with CY62146DV30 Ultra low standby power Typical standby current 1 pA Maximum standby current 7 pA Ultra low active power Typical active current 2 mA f 1 MHz Easy memory expansion with CE and OE features Automatic power down when deselected CMOS for optimum speed and power Available in a Pb free 48 ball VFBGA
CYPRESS CY62147DV18 MoBL2 4 Mb 256K x 16 Static RAM Features Very high speed 55 ns and 70 ns Wide voltage range 1 65V 2 25V Pin compatible with CY62147CV18 Ultra low active power Typical active current 1 mA f 1 MHz Typical active current 6 mA f f max Ultra low standby power ___ Easy memory expansion with CE and OE features Automatic power down when deselected CMOS for optimum speed power Packages
0 CYPRESS PERFORM CY62147DV30 4 Mbit 256K x 16 Static RAM Features Temperature Ranges Industrial 40 C to 85 C Automotive A 40 C to 85 C Automotive E 40 C to 125 C Very high speed 45 ns Wide voltage range 2 20V 3 60V Pin compatible with CY62147CV25 CY62147CV30 and CY62147CV33 Ultra low active power Typical active current 1 5 mA f 1 MHz Typical active current 8 mA S f f gx Ultra low
CYPRESS PERFORM Features Very high speed 45 ns Voltage range 4 5V 5 5V Pin compatible with CY62148B Ultra low standby power Typical standby current 1 pA Maximum standby current 7 pA Industrial Ultra low active power Typical active current 2 0 mA f 1 MHz Easy memory expansion with CE and OE features Automatic power down when deselected CMOS for optimum speed and power Available in Pb free 32 pin TSOP II
y CYPRESS PERFORM CY62148ESL MoBL 4 Mbit 512K x 8 Static RAM Features Very high speed 55 ns Wide voltage range 2 2V to 3 6V and 4 5V to 5 5V Ultra low standby power Typical standby current 1 pA Maximum standby current 7 pA Ultra low active power Typical active current 2 mA at f 1 MHz Easy memory expansion with CE and OE features Automatic power down when deselected CMOS for optimum speed and power Avail
PERFORM MoBL CY62148EV30 4 Mbit 512K x 8 Static RAM Features Very high speed 45 ns Wide voltage range 2 20V to 3 60V Temperature ranges Industrial 40 C to 85 C Automotive A 40 C to 85 C Pin compatible with CY62148DV30 Ultra low standby power Typical standby current 1 gA Maximum standby current 7 pA Industrial Ultra low active power Typical active current 2 mA at f 1 MHz Easy memory expans
CY62157CV30 33 CYPRESS PERFORM 512K x 16 Static RAM Features Temperature Ranges Automotive A 40 C to 85 C Automotive E 40 lt to 125 C Voltage range CY62157CV30 2 7V 3 3V CY62157CV33 3 0V 3 6V Ultra low active power Typical active current 1 5 mA f 1 MHz Typical active current 5 5 mA f f max Low standby power Easy memory expansion with CE 1 CE 2 and OE features Automatic power down w
CY62157CV30 33 CYPRESS PERFORM 512K x 16 Static RAM Features Temperature Ranges Automotive A 40 C to 85 C Automotive E 40 lt to 125 C Voltage range CY62157CV30 2 7V 3 3V CY62157CV33 3 0V 3 6V Ultra low active power Typical active current 1 5 mA f 1 MHz Typical active current 5 5 mA f f max Low standby power Easy memory expansion with CE 1 CE 2 and OE features Automatic power down w
CYPRESS PERFORM CY62157ESL MoBL 8 Mbit 512K x 16 Static RAM Features Very high speed 45 ns Wide voltage range 2 2V 3 6V and 4 5V 5 5V Ultra low standby power Typical Standby current 2 pA Maximum Standby current 8 pA Ultra low active power Typical active current 1 8 mA at f 1 MHz Easy memory expansion with CE and OE features Automatic power down when deselected CMOS for optimum speed and power Available
CYPRESS PERFORM Features Very high speed 55 ns Wide voltage range 1 65V 2 25V Pin Compatible with CY62157DV18 and CY62157DV20 Ultra low standby power Typical Standby current 2 pA Maximum Standby current 8 pA Ultra low active power Typical active current 1 8 mA f 1 MHz Easy memory expansion with CE CE 2 and OE features Automatic power down when deselected CMOS for optimum speed and power Available in P
CY62158E MoBL 8 Mbit 1M x 8 Static RAM Features Very high speed 45 ns Wide voltage range 4 5V 5 5V Ultra low active power Typical active currents 8 mA f 1 MHz Typical active current 18 mA f f max Ultra low standby power Typical standby current 2 pA Maximum standby current 8 pA Easy memory expansion with CE CE 2 and OE features Automatic power down when deselected CMOS for optimum speed and power
CYPRESS PERFORM CY62158EV30 MoBL 8 Mbit 1024K x 8 Static RAM Features Very high speed 45 ns Wide voltage range 2 20V 3 60V Pin compatible with CY62158DV30 Ultra low standby power Typical standby current 2 pA Maximum standby current 8 pA Ultra low active power Typical active current 1 8 mA f 1 MHz Easy memory expansion with CE CE 2 and OE features Automatic power down when deselected CMOS for op
CYPRESS PERFORM CY62167DV18 MoBL 16 Mbit 1M x 16 Static RAM Features Very high speed 55 ns Wide voltage range 1 65V 1 95V Ultra low active power Typical active current 1 5 mA f 1 MHz Typical active current 15 mA f f max Ultra low standby power Easy memory expansion with CE CE 2 and OE features Automatic powerdown when deselected CMOS for optimum speed and power Available in Pb free 48 ball VFBGA pac
PERFORM CY62167EV18 MoBL 16 Mbit 1M x 16 Static RAM Features Very high speed 55 ns Wide voltage range 1 65V to 2 25V Ultra low standby power Typical standby current 1 5 pA Maximum standby current 12 pA Ultra low active power Typical active current 2 2 mA atf 1 MHz Easy memory expansion with CE CE 2 and OE features Automatic power down when deselected CMOS for optimum speed and power Offered in Pb free
y CYPRESS PERFORM CY62167EV30 MoBL 16 Mbit 1M x 16 2M x 8 Static RAM Features TSOP I Package Configurable as 1M x 16 or2M x 8 SRAM Very High Speed 45 ns Temperature Ranges Industrial 40 C to 85 C Automotive A 40 C to 85 C Wide Voltage Range 2 20V to 3 60V Ultra Low Standby Power Typical standby current 1 5 pA Maximum standby current 12 pA Ultra Low Active Power Typical active current 2 2 mA
CY7B991 CY7B992 y CYPRESS PERFORM Programmable Skew Clock Buffer Features All output pair skew lt 100 ps typical 250 maximum 3 75 to 80 MHz output operation User selectable output functions Selectable skew to 18 ns Inverted and non inverted Operation at 1 2 and 1 4 input frequency Operation at 2x and 4x input frequency input as low as 3 75 MHz Zero input to output delay 50 duty cycle outputs Outputs drive 50Q t
CY7B9910 CY7B9920 y CYPRESS PERFORM Low Skew Clock Buffer Features All outputs skew lt 100 ps typical 250 max 15 to 80 MHz output operation Zero input to output delay 50 duty cycle outputs Outputs drive 50Q terminated lines Low operating current 24 pin SOIC package Jitter lt 200 ps peak to peak lt 25 ps RMS Functional Description The CY7B9910 and CY7B9920 Low Skew Clock Buffers offer low skew system clock distributio
CY7B9911V CYPRESS 3 3V RoboClock High Speed Low Voltage Programmable Skew Clock Buffer Features Functional Description All output pair skew lt 100 ps typical 250 max 3 75 to 110 MHz output operation User selectable output functions Selectable skew to 18 ns Inverted and non inverted Operation at V 2 and V 4 input frequency Operation at 2x and 4x input frequency input as low as 3 75 MHz Zero input to output delay
CY7B991 CY7B992 y CYPRESS PERFORM Programmable Skew Clock Buffer Features All output pair skew lt 100 ps typical 250 maximum 3 75 to 80 MHz output operation User selectable output functions Selectable skew to 18 ns Inverted and non inverted Operation at 1 2 and 1 4 input frequency Operation at 2x and 4x input frequency input as low as 3 75 MHz Zero input to output delay 50 duty cycle outputs Outputs drive 50Q t
CY7B9910 CY7B9920 y CYPRESS PERFORM Low Skew Clock Buffer Features All outputs skew lt 100 ps typical 250 max 15 to 80 MHz output operation Zero input to output delay 50 duty cycle outputs Outputs drive 50Q terminated lines Low operating current 24 pin SOIC package Jitter lt 200 ps peak to peak lt 25 ps RMS Functional Description The CY7B9910 and CY7B9920 Low Skew Clock Buffers offer low skew system clock distributio
CYPRESS PERFORM CY7C024AV 024BV 025AV 026AV CY7C0241AV 0251AV 036AV 3 3V 4K 8K 16K x 16 18 Dual Port Static RAM Features True dual ported memory cells which enable simultaneous access of the same memory location 4 8 or 16K X 16 organization CY7C024AV 024BV 025AV 026AV 4 or 8K X 18 organization CY7C0241 AV 0251 AV 16K X 18 organization CY7C036AV 0 35 micron CMOS for optimum speed and power High speed access 20 and 25 ns
CYPRESS PERFORM CY7C024AV 024BV 025AV 026AV CY7C0241AV 0251AV 036AV 3 3V 4K 8K 16K x 16 18 Dual Port Static RAM Features True dual ported memory cells which enable simultaneous access of the same memory location 4 8 or 16K X 16 organization CY7C024AV 024BV 025AV 026AV 4 or 8K X 18 organization CY7C0241 AV 0251 AV 16K X 18 organization CY7C036AV 0 35 micron CMOS for optimum speed and power High speed access 20 and 25 ns
y CYPRESS PERFORM CY7C024AV 024BV 025AV 026AV CY7C0241AV 0251AV 036AV 3 3V 4K 8K 16K x 16 18 Dual Port Static RAM Features True dual ported memory cells which enable simultaneous access of the same memory location 4 8 or 16K x 16 organization CY7C024AV 024BV I 1 025AV 026AV 4 or 8K x 18 organization CY7C0241 AV 0251 AV 16K x 18 organization CY7C036AV 0 35 micron CMOS for optimum speed and power High speed access 20 and 25
y CYPRESS PERFORM CY7C024AV 024BV 025AV 026AV CY7C0241AV 0251AV 036AV 3 3V 4K 8K 16K x 16 18 Dual Port Static RAM Features True dual ported memory cells which enable simultaneous access of the same memory location 4 8 or 16K x 16 organization CY7C024AV 024BV I 1 025AV 026AV 4 or 8K x 18 organization CY7C0241 AV 0251 AV 16K x 18 organization CY7C036AV 0 35 micron CMOS for optimum speed and power High speed access 20 and 25
y CYPRESS PERFORM CY7C024AV 024BV 025AV 026AV CY7C0241AV 0251AV 036AV 3 3V 4K 8K 16K x 16 18 Dual Port Static RAM Features True dual ported memory cells which enable simultaneous access of the same memory location 4 8 or 16K x 16 organization CY7C024AV 024BV I 1 025AV 026AV 4 or 8K x 18 organization CY7C0241 AV 0251 AV 16K x 18 organization CY7C036AV 0 35 micron CMOS for optimum speed and power High speed access 20 and 25
y CYPRESS PERFORM CY7C024AV 024BV 025AV 026AV CY7C0241AV 0251AV 036AV 3 3V 4K 8K 16K x 16 18 Dual Port Static RAM Features True dual ported memory cells which enable simultaneous access of the same memory location 4 8 or 16K x 16 organization CY7C024AV 024BV I 1 025AV 026AV 4 or 8K x 18 organization CY7C0241 AV 0251 AV 16K x 18 organization CY7C036AV 0 35 micron CMOS for optimum speed and power High speed access 20 and 25
r C Y7C027V 027VN 027AV 028V CYPRESS CY7C037V 037AV 038V 3 3V 32K 64K x 16 18 Dual Port Static RAM Features True Dual Ported memory cells which allow simultaneous access of the same memory location 32K x 16 organization CY7C027V 027VN 027AV I 1 64K x 16 organization CY7C028V 32K x 18 organization CY7C037V 037AVI 2 64K x 18 organization CY7C038V 0 35 micron CMOS for optimum speed and power High speed access 15 20 and 25 n
r C Y7C027V 027VN 027AV 028V CYPRESS CY7C037V 037AV 038V 3 3V 32K 64K x 16 18 Dual Port Static RAM Features True Dual Ported memory cells which allow simultaneous access of the same memory location 32K x 16 organization CY7C027V 027VN 027AV I 1 64K x 16 organization CY7C028V 32K x 18 organization CY7C037V 037AVI 2 64K x 18 organization CY7C038V 0 35 micron CMOS for optimum speed and power High speed access 15 20 and 25 n
r C Y7C027V 027VN 027AV 028V CYPRESS CY7C037V 037AV 038V 3 3V 32K 64K x 16 18 Dual Port Static RAM Features True Dual Ported memory cells which allow simultaneous access of the same memory location 32K x 16 organization CY7C027V 027VN 027AV I 1 64K x 16 organization CY7C028V 32K x 18 organization CY7C037V 037AVI 2 64K x 18 organization CY7C038V 0 35 micron CMOS for optimum speed and power High speed access 15 20 and 25 n
r C Y7C027V 027VN 027AV 028V CYPRESS CY7C037V 037AV 038V 3 3V 32K 64K x 16 18 Dual Port Static RAM Features True Dual Ported memory cells which allow simultaneous access of the same memory location 32K x 16 organization CY7C027V 027VN 027AV I 1 64K x 16 organization CY7C028V 32K x 18 organization CY7C037V 037AVI 2 64K x 18 organization CY7C038V 0 35 micron CMOS for optimum speed and power High speed access 15 20 and 25 n
y CYPRESS PERFORM CY7C024AV 024BV 025AV 026AV CY7C0241AV 0251AV 036AV 3 3V 4K 8K 16K x 16 18 Dual Port Static RAM Features True dual ported memory cells which enable simultaneous access of the same memory location 4 8 or 16K x 16 organization CY7C024AV 024BV I 1 025AV 026AV 4 or 8K x 18 organization CY7C0241 AV 0251 AV 16K x 18 organization CY7C036AV 0 35 micron CMOS for optimum speed and power High speed access 20 and 25
r C Y7C027V 027VN 027AV 028V CYPRESS CY7C037V 037AV 038V 3 3V 32K 64K x 16 18 Dual Port Static RAM Features True Dual Ported memory cells which allow simultaneous access of the same memory location 32K x 16 organization CY7C027V 027VN 027AV I 1 64K x 16 organization CY7C028V 32K x 18 organization CY7C037V 037AVI 2 64K x 18 organization CY7C038V 0 35 micron CMOS for optimum speed and power High speed access 15 20 and 25 n
r C Y7C027V 027VN 027AV 028V CYPRESS CY7C037V 037AV 038V 3 3V 32K 64K x 16 18 Dual Port Static RAM Features True Dual Ported memory cells which allow simultaneous access of the same memory location 32K x 16 organization CY7C027V 027VN 027AV I 1 64K x 16 organization CY7C028V 32K x 18 organization CY7C037V 037AVI 2 64K x 18 organization CY7C038V 0 35 micron CMOS for optimum speed and power High speed access 15 20 and 25 n
r C Y7C027V 027VN 027AV 028V CYPRESS CY7C037V 037AV 038V 3 3V 32K 64K x 16 18 Dual Port Static RAM Features True Dual Ported memory cells which allow simultaneous access of the same memory location 32K x 16 organization CY7C027V 027VN 027AV I 1 64K x 16 organization CY7C028V 32K x 18 organization CY7C037V 037AVI 2 64K x 18 organization CY7C038V 0 35 micron CMOS for optimum speed and power High speed access 15 20 and 25 n
CY7C0430BV CY7C0430CV CYPRESS PERFORM 10 Gb s 3 3V QuadPort DSE Family Features QuadPort datapath switching element DSE family allows four independent ports of access for data path management and switching High bandwidth data throughput up to 10 Gb s 133 MHz port speed x 18 bit wide interface x 4 ports High speed clock to data access 4 2 ns max Synchronous pipelined device 1 Mb 64K x 18 switch array 0 25 micron CMOS
CY7C0430BV CY7C0430CV CYPRESS PERFORM 10 Gb s 3 3V QuadPort DSE Family Features QuadPort datapath switching element DSE family allows four independent ports of access for data path management and switching High bandwidth data throughput up to 10 Gb s 133 MHz port speed x 18 bit wide interface x 4 ports High speed clock to data access 4 2 ns max Synchronous pipelined device 1 Mb 64K x 18 switch array 0 25 micron CMOS